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| FX30KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0260-0100 Rev.1.00 Aug.20.2004 Features * * * * * Drive voltage : 4 V VDSS : - 30 V rDS(ON) (max) : 61 m ID : - 30 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline TO-220FN 3 1. Gate 2. Drain 3. Source 1 1 2 3 2 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- Ratings -30 20 -30 -120 -30 -30 -120 25 - 55 to +150 - 55 to +150 2000 2.0 Unit V V A A A A A W C C V g Conditions VGS = 0 V VDS = 0 V L = 10 H AC 1 minute, Terminal to case Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FX30KMJ-03 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. -30 -- -- -1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.8 48 96 -0.72 11.9 2460 410 170 20 84 123 60 -1.0 -- 50 Max. -- 0.1 -0.1 -2.3 61 120 -0.92 -- -- -- -- -- -- -- -- -1.5 5.00 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = -1 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -1 mA, VDS = -10 V ID = -15 A, VGS = -10 V ID = - 5 A, VGS = - 4 V ID = -15 A, VGS = -10 V ID = -15 A, VDS = -10 V VDS = -10 V, VGS = 0 V, f = 1MHz VDD = -15 V, ID = -15 A, VGS = -10 V, RGEN = RGS = 50 IS = -15 A, VGS = 0 V Channel to case IS = -15 A, dis/dt = 50 A/s Rev.1.00, Aug.20.2004, page 2 of 6 FX30KMJ-03 Performance Curves Drain Power Dissipation Derating Curve 50 -2 Maximum Safe Operating Area Drain Power Dissipation PD (W) -102 tw = 10s Drain Current ID (A) 40 -7 -5 -3 -2 100s 1ms 10ms DC 30 -101 -7 -5 -3 -2 20 10 -100 -7 -5 Tc = 25C -3 Single Pulse 0 0 50 100 150 200 -2 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 Case Temperature Tc (C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) - 50 Output Characteristics (Typical) -20 VGS= -10V -7V - 8V - 6V VGS= -10V - 8V - 6V - 5V - 4V PD = 25W Tc = 25C Pulse Test - 3V Drain Current ID (A) - 30 - 5V Tc = 25C Pulse Test Drain Current ID (A) - 40 -16 -12 - 20 - 4V P D = 25W - 3V 0 -1.0 -2.0 -3.0 - 4.0 - 5.0 -8 -10 -4 0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (m) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) - 5.0 On-State Resistance vs. Drain Current (Typical) 200 Tc = 25C Pulse Test - 4.0 Tc = 25C Pulse Test 160 - 3.0 ID = - 50A 120 VGS = - 4V - 2.0 80 - 30A -1.0 -10V 40 0 -10-1 -2 -3 -5 -7-100 -2 -3 -5-7 -101 -2 -3 -5 -7-102 -15A 0 0 -2 -4 -6 -8 -10 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FX30KMJ-03 Forward Transfer Admittance vs. Drain Current (Typical) Transfer Characteristics (Typical) - 50 Forward Transfer Admittance | yfs | (S) 2 Drain Current ID (A) Tc = 25C VDS = -10V - 40 Pulse Test VDS = -10V 102 Pulse Test 7 5 4 3 2 - 30 75C Tc = 25C 125C - 20 101 7 5 4 3 -10 0 0 -2 -4 -6 -8 -10 -100 2 -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 2 Drain Current ID (A) Switching Characteristics (Typical) 103 7 5 4 3 2 3 2 Ciss Switching Time (ns) Tch = 25C 104 f = 1MHz 7 5 VGS = 0V Capacitance (pF) Tch = 25C VGS = -10V VDD = -15V RGEN = RGS = 50 td(off) tf 103 7 5 3 2 Coss Crss 102 7 5 4 3 2 102 7 5 3 2 -3 -5-7-100 -2 -3 -5-7-101 -2 3 -5-7 -102 -2 -3 tr td(on) 101 0 -10 -2 -3 -5 -7-101 -2 -3 -5 -7-102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) -10 - 50 Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) Tch = 25C ID = - 30A Source Current IS (A) -8 - 40 -6 - 30 -4 -2 VDS = -10V - 20V - 25V - 20 -10 Tc = 25C 75C 125C 0 0 10 20 30 40 50 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FX30KMJ-03 On-State Resistance vs. Channel Temperature (Typical) 101 7 VGS = -10V ID = 1/2 ID 5 4 Pulse Test 3 2 Drain-Source On-State Resistance rDS(ON) (25C) Drain-Source On-State Resistance rDS(ON) (tC) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) - 4.0 VDS = -10V ID = -1mA - 3.2 - 2.4 100 7 5 4 3 2 -1.6 - 0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 Channel Temperature Tch (C) Channel Temperature Tch (C) Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C) Transient Thermal Impedance Zth(ch-c) (C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 D =1 5 3 0.5 2 7 5 3 2 VGS = 0V ID = -1mA 1.2 1.0 0.2 100 0.1 0.05 0.02 0.01 Single Pulse 0.8 10-1 7 5 3 2 PDM tw T 0.6 D = tw T 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Channel Temperature Tch (C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. Vout Monitor Switching Waveform Vin 10% 90% RGEN RL RGS VDD 90% 90% Vout td(on) 10% 10% tr td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FX30KMJ-03 Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 0.3 2.8 0.2 15 0.3 3 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example FX30KMJ-03 FX30KMJ-03-A8 Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 2.6 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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